RM2003 Rectron USA
Hersteller: Rectron USA
Description: MOSFET N&P-CH 20V 3A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V, 325pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 4.5V, 75mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 3.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA, 1V @ 250µA
Supplier Device Package: SOT-23-6
Description: MOSFET N&P-CH 20V 3A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V, 325pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 4.5V, 75mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 3.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA, 1V @ 250µA
Supplier Device Package: SOT-23-6
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Technische Details RM2003 Rectron USA
Description: MOSFET N&P-CH 20V 3A SOT23-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 800mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V, 325pF @ 10V, Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 4.5V, 75mOhm @ 2.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 3.2nC @ 4.5V, Vgs(th) (Max) @ Id: 1.2V @ 250µA, 1V @ 250µA, Supplier Device Package: SOT-23-6.