
RMLV0816BGSD-4S2#HC0 Renesas Electronics Corporation

Description: IC SRAM 8MBIT PARALLEL 52TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 52-TFSOP (0.350", 8.89mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 52-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details RMLV0816BGSD-4S2#HC0 Renesas Electronics Corporation
Description: IC SRAM 8MBIT PARALLEL 52TSOP II, Packaging: Tape & Reel (TR), Package / Case: 52-TFSOP (0.350", 8.89mm Width), Mounting Type: Surface Mount, Memory Size: 8Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.4V ~ 3.6V, Technology: SRAM, Memory Format: SRAM, Supplier Device Package: 52-TSOP II, Write Cycle Time - Word, Page: 45ns, Memory Interface: Parallel, Access Time: 45 ns, Memory Organization: 1M x 8, 512K x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote RMLV0816BGSD-4S2#HC0
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
![]() |
RMLV0816BGSD-4S2#HC0 | Hersteller : Renesas Electronics Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: 52-TFSOP (0.350", 8.89mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.4V ~ 3.6V Technology: SRAM Memory Format: SRAM Supplier Device Package: 52-TSOP II Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 1M x 8, 512K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
|
RMLV0816BGSD-4S2#HC0 | Hersteller : Renesas Electronics |
![]() |
Produkt ist nicht verfügbar |