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RN1101,LF(CT

RN1101,LF(CT Toshiba


RN1101_datasheet_en_20240925-740910.pdf
Hersteller: Toshiba
Digital Transistors Bias Resistor Built- in Transistor
auf Bestellung 21082 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+0.23 EUR
18+0.16 EUR
100+0.07 EUR
1000+0.062 EUR
3000+0.049 EUR
9000+0.048 EUR
24000+0.046 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN1101,LF(CT Toshiba

Description: TRANS PREBIAS NPN 50V 0.1A SSM, Resistors Included: R1 and R2, Resistor - Emitter Base (R2): 4.7 kOhms, Resistor - Base (R1): 4.7 kOhms, Frequency - Transition: 250 MHz, Power - Max: 100 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: SSM, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416, Packaging: Tape & Reel (TR).

Weitere Produktangebote RN1101,LF(CT nach Preis ab 0.067 EUR bis 0.26 EUR

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Preis
RN1101,LF(CT RN1101,LF(CT Hersteller : Toshiba Semiconductor and Storage RN1101-06.pdf Description: TRANS PREBIAS NPN 50V 0.1A SSM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
auf Bestellung 1296 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
104+0.17 EUR
168+0.11 EUR
500+0.077 EUR
1000+0.067 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
RN1101,LF(CT RN1101,LF(CT Hersteller : Toshiba Semiconductor and Storage RN1101-06.pdf Description: TRANS PREBIAS NPN 50V 0.1A SSM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH