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RN1101,LXHF(CT

RN1101,LXHF(CT Toshiba Semiconductor and Storage

docget.jsp?did=18746&prodName=RN1105 Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.09 EUR
6000+0.08 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN1101,LXHF(CT Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V 0.1A SSM, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V, Supplier Device Package: SSM, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 100 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote RN1101,LXHF(CT nach Preis ab 0.07 EUR bis 0.39 EUR

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RN1101,LXHF(CT RN1101,LXHF(CT Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=18746&prodName=RN1105 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8939 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
81+0.22 EUR
121+0.15 EUR
500+0.11 EUR
1000+0.10 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
RN1101,LXHF(CT RN1101,LXHF(CT Hersteller : Toshiba RN1101_datasheet_en_20240925-1150531.pdf Digital Transistors AUTO AEC-Q Single NPN Q1BSR=4.7kO, Q1BER=4.7kO, VCEO=50V, IC=0.1A (SOT-416)
auf Bestellung 4850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+0.39 EUR
11+0.26 EUR
100+0.12 EUR
1000+0.11 EUR
3000+0.08 EUR
9000+0.07 EUR
24000+0.07 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
RN1101,LXHF(CT
Produktcode: 191959
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