Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > RN1101,LXHF(CT
RN1101,LXHF(CT

RN1101,LXHF(CT Toshiba Semiconductor and Storage

docget.jsp?did=18746&prodName=RN1101 Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.14 EUR
6000+ 0.13 EUR
Mindestbestellmenge: 3000
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Technische Details RN1101,LXHF(CT Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V 0.1A SSM, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V, Supplier Device Package: SSM, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 100 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote RN1101,LXHF(CT nach Preis ab 0.11 EUR bis 0.82 EUR

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Preis ohne MwSt
RN1101,LXHF(CT RN1101,LXHF(CT Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=18746&prodName=RN1101 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8980 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
34+0.78 EUR
49+ 0.54 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 34
RN1101,LXHF(CT RN1101,LXHF(CT Hersteller : Toshiba RN1101_datasheet_en_20210830-1150531.pdf Digital Transistors AUTO AEC-Q Single NPN Q1BSR=4.7kO, Q1BER=4.7kO, VCEO=50V, IC=0.1A (SOT-416)
auf Bestellung 5340 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
64+0.82 EUR
88+ 0.6 EUR
230+ 0.23 EUR
1000+ 0.17 EUR
3000+ 0.13 EUR
9000+ 0.12 EUR
24000+ 0.11 EUR
Mindestbestellmenge: 64
RN1101,LXHF(CT
Produktcode: 191959 		docget.jsp?did=18746&prodName=RN1101 Transistoren > Bipolar-Transistoren NPN
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