RN1101,LXHF(CT
Produktcode: 191959
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Lieblingsprodukt
Hersteller:
Transistoren > Bipolar-Transistoren NPN
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Weitere Produktangebote RN1101,LXHF(CT nach Preis ab 0.067 EUR bis 0.39 EUR
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RN1101,LXHF(CT | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSMPackaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: SSM Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1101,LXHF(CT | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSMPackaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: SSM Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 |
auf Bestellung 8939 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1101,LXHF(CT | Hersteller : Toshiba |
Digital Transistors AUTO AEC-Q Single NPN Q1BSR=4.7kO, Q1BER=4.7kO, VCEO=50V, IC=0.1A (SOT-416) |
auf Bestellung 4850 Stücke: Lieferzeit 10-14 Tag (e) |
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