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RN1101MFV,L3F(CT

RN1101MFV,L3F(CT Toshiba Semiconductor and Storage

RN1101MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1101MFV
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.043 EUR
Mindestbestellmenge: 8000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN1101MFV,L3F(CT Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V 0.1A VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V, Supplier Device Package: VESM, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, Resistors Included: R1 and R2.

Weitere Produktangebote RN1101MFV,L3F(CT nach Preis ab 0.032 EUR bis 0.25 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RN1101MFV,L3F(CT RN1101MFV,L3F(CT Hersteller : Toshiba F27B2E93D27D950B965D1798294F644C3A426B0E6ABDA0FDA8ABC358BFFB3ABA.pdf Digital Transistors 4.7kohm/4.7kohm 0.1A SOT-723 50V
auf Bestellung 16551 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+0.24 EUR
20+0.15 EUR
100+0.092 EUR
500+0.065 EUR
1000+0.051 EUR
5000+0.039 EUR
8000+0.032 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
RN1101MFV,L3F(CT RN1101MFV,L3F(CT Hersteller : Toshiba Semiconductor and Storage RN1101MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1101MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
auf Bestellung 15250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
113+0.16 EUR
182+0.097 EUR
500+0.07 EUR
1000+0.062 EUR
2000+0.054 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH