RN1101MFV,L3F(CT

RN1101MFV,L3F(CT Toshiba Semiconductor and Storage


RN1101MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1101MFV Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 8000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8000+0.046 EUR
Mindestbestellmenge: 8000
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Technische Details RN1101MFV,L3F(CT Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V 0.1A VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V, Supplier Device Package: VESM, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms.

Weitere Produktangebote RN1101MFV,L3F(CT nach Preis ab 0.031 EUR bis 0.41 EUR

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RN1101MFV,L3F(CT RN1101MFV,L3F(CT Hersteller : Toshiba Semiconductor and Storage RN1101MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1101MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 14911 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
63+0.28 EUR
87+ 0.25 EUR
163+ 0.14 EUR
500+ 0.11 EUR
1000+ 0.074 EUR
2000+ 0.061 EUR
Mindestbestellmenge: 63
RN1101MFV,L3F(CT RN1101MFV,L3F(CT Hersteller : Toshiba RN1101MFV_datasheet_en_20210818-1760672.pdf Digital Transistors 4.7kohm/4.7kohm 0.1A SOT-723 50V
auf Bestellung 30888 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
127+0.41 EUR
186+ 0.28 EUR
409+ 0.13 EUR
1000+ 0.075 EUR
2500+ 0.065 EUR
8000+ 0.049 EUR
24000+ 0.047 EUR
Mindestbestellmenge: 127
RN1101MFV,L3F(CT Hersteller : Toshiba rn1105mfv_datasheet_en_20181221.pdf Transistor Silicon NPN Epitaxial PCT Process Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
auf Bestellung 14451 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
4099+0.038 EUR
4116+ 0.037 EUR
8000+ 0.031 EUR
Mindestbestellmenge: 4099