RN1102MFV,L3F

RN1102MFV,L3F Toshiba Semiconductor and Storage


docget.jsp?did=5879&prodName=RN1102MFV
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 24000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.058 EUR
16000+0.052 EUR
24000+0.049 EUR
Mindestbestellmenge: 8000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN1102MFV,L3F Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V 0.1A VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Supplier Device Package: VESM, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Resistors Included: R1 and R2.

Weitere Produktangebote RN1102MFV,L3F nach Preis ab 0.042 EUR bis 0.33 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RN1102MFV,L3F RN1102MFV,L3F Hersteller : Toshiba RN1102MFV_datasheet_en_20210818-1760677.pdf Digital Transistors Bias Resistor Built-in transistor
auf Bestellung 22696 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+0.32 EUR
15+0.19 EUR
100+0.081 EUR
1000+0.063 EUR
2500+0.06 EUR
8000+0.048 EUR
24000+0.042 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
RN1102MFV,L3F RN1102MFV,L3F Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=5879&prodName=RN1102MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 25459 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
86+0.21 EUR
138+0.13 EUR
500+0.093 EUR
1000+0.082 EUR
2000+0.073 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH