auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 8000+ | 0.05 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RN1102MFV,L3F Toshiba
Description: TRANS PREBIAS NPN 50V 0.1A VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Supplier Device Package: VESM, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms.
Weitere Produktangebote RN1102MFV,L3F nach Preis ab 0.04 EUR bis 0.33 EUR
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RN1102MFV,L3F | Hersteller : Toshiba |
 Trans Digital BJT NPN 50V 100mA 150mW 3-Pin VESM T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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RN1102MFV,L3F | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESM Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: VESM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1102MFV,L3F | Hersteller : Toshiba |
Trans Digital BJT NPN 50V 100mA 150mW 3-Pin VESM T/R |
auf Bestellung 3780 Stücke: Lieferzeit 14-21 Tag (e) |
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RN1102MFV,L3F | Hersteller : Toshiba |
Trans Digital BJT NPN 50V 100mA 150mW 3-Pin VESM T/R |
auf Bestellung 3780 Stücke: Lieferzeit 14-21 Tag (e) |
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RN1102MFV,L3F | Hersteller : Toshiba |
Digital Transistors Bias Resistor Built-in transistor |
auf Bestellung 22696 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1102MFV,L3F | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESM Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: VESM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 27430 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1102MFV,L3F | Hersteller : Toshiba |
Trans Digital BJT NPN 50V 100mA 150mW 3-Pin VESM T/R |
Produkt ist nicht verfügbar |