_SPL.jpg "RN1102MFV,L3XHF(CT")
RN1102MFV,L3XHF(CT Toshiba
Hersteller: Toshiba
Digital Transistors AUTO AEC-Q Single NPN Q1BSR=10kO, Q1BER=10kO, VCEO=50V, IC=0.1A (SOT-723)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 0.5 EUR |
| 11+ | 0.31 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.14 EUR |
| 2500+ | 0.13 EUR |
| 5000+ | 0.11 EUR |
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Technische Details RN1102MFV,L3XHF(CT Toshiba
Description: TRANS PREBIAS NPN 50V 0.1A VESM, Qualification: AEC-Q101, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 10 kOhms, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Grade: Automotive, Supplier Device Package: VESM, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).
Weitere Produktangebote RN1102MFV,L3XHF(CT nach Preis ab 0.12 EUR bis 0.63 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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RN1102MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESM Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Grade: Automotive Supplier Device Package: VESM DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 10 kOhms |
auf Bestellung 1220 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1102MFV,L3XHF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
auf Bestellung 1220 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 34+ | 0.63 EUR |
| 49+ | 0.43 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.12 EUR |