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RN1102MFV,L3XHF(CT

RN1102MFV,L3XHF(CT Toshiba Semiconductor and Storage

RN1102MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1102MFV Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 1415 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
34+0.53 EUR
48+ 0.37 EUR
100+ 0.18 EUR
500+ 0.15 EUR
1000+ 0.1 EUR
Mindestbestellmenge: 34
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Technische Details RN1102MFV,L3XHF(CT Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V 0.1A VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Supplier Device Package: VESM, Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Qualification: AEC-Q101.

Weitere Produktangebote RN1102MFV,L3XHF(CT nach Preis ab 0.065 EUR bis 0.56 EUR

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RN1102MFV,L3XHF(CT RN1102MFV,L3XHF(CT Hersteller : Toshiba RN1102MFV_datasheet_en_20210818-1760677.pdf Digital Transistors AUTO AEC-Q Single NPN Q1BSR=10kO, Q1BER=10kO, VCEO=50V, IC=0.1A (SOT-723)
auf Bestellung 7175 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+0.56 EUR
10+ 0.41 EUR
100+ 0.16 EUR
1000+ 0.099 EUR
2500+ 0.092 EUR
8000+ 0.072 EUR
24000+ 0.065 EUR
Mindestbestellmenge: 6
RN1102MFV,L3XHF(CT RN1102MFV,L3XHF(CT Hersteller : Toshiba Semiconductor and Storage RN1102MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1102MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
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