Produkte > TOSHIBA > RN1102MFV,L3XHF(CT
RN1102MFV,L3XHF(CT

RN1102MFV,L3XHF(CT Toshiba

86FA15F73FDDDDD252C69271F5AC9C7DF837FAAD09D56510D4CF9545B9BDED7C.pdf
Hersteller: Toshiba
Digital Transistors AUTO AEC-Q Single NPN Q1BSR=10kO, Q1BER=10kO, VCEO=50V, IC=0.1A (SOT-723)
auf Bestellung 6595 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+0.41 EUR
12+0.24 EUR
100+0.15 EUR
500+0.11 EUR
1000+0.1 EUR
2500+0.093 EUR
5000+0.077 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details RN1102MFV,L3XHF(CT Toshiba

Description: TRANS PREBIAS NPN 50V 0.1A VESM, Qualification: AEC-Q101, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 10 kOhms, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Grade: Automotive, Supplier Device Package: VESM, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).

Weitere Produktangebote RN1102MFV,L3XHF(CT nach Preis ab 0.1 EUR bis 0.53 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RN1102MFV,L3XHF(CT RN1102MFV,L3XHF(CT Hersteller : Toshiba Semiconductor and Storage RN1102MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1102MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
auf Bestellung 1220 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
49+0.36 EUR
100+0.18 EUR
500+0.15 EUR
1000+0.1 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
RN1102MFV,L3XHF(CT RN1102MFV,L3XHF(CT Hersteller : Toshiba Semiconductor and Storage RN1102MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1102MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH