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RN1104MFV,L3XHF(CT

RN1104MFV,L3XHF(CT Toshiba Semiconductor and Storage

RN1104MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1104MFV Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.08 EUR
16000+0.07 EUR
Mindestbestellmenge: 8000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN1104MFV,L3XHF(CT Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V 0.1A VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: VESM, Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms, Qualification: AEC-Q101.

Weitere Produktangebote RN1104MFV,L3XHF(CT nach Preis ab 0.09 EUR bis 0.45 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RN1104MFV,L3XHF(CT RN1104MFV,L3XHF(CT Hersteller : Toshiba Semiconductor and Storage RN1104MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1104MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
67+0.27 EUR
107+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.10 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
RN1104MFV,L3XHF(CT RN1104MFV,L3XHF(CT Hersteller : Toshiba RN1104MFV_datasheet_en_20210818-1627374.pdf Digital Transistors AUTO AEC-Q Single NPN Q1BSR=47kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-723)
auf Bestellung 15980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+0.45 EUR
11+0.27 EUR
100+0.17 EUR
500+0.12 EUR
1000+0.10 EUR
2500+0.09 EUR
5000+0.09 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH