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RN1105MFV,L3F(CT

RN1105MFV,L3F(CT Toshiba Semiconductor and Storage

docget.jsp?did=5879&prodName=RN1105MFV
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.046 EUR
16000+0.039 EUR
Mindestbestellmenge: 8000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN1105MFV,L3F(CT Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V 0.1A VESM, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 2.2 kOhms, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: VESM, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).

Weitere Produktangebote RN1105MFV,L3F(CT nach Preis ab 0.026 EUR bis 0.28 EUR

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RN1105MFV,L3F(CT RN1105MFV,L3F(CT Hersteller : Toshiba RN1105MFV_datasheet_en_20210818-1760673.pdf Digital Transistors 2.2kohm 47kohm 0.1A SOT-723 50V
auf Bestellung 14889 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+0.2 EUR
22+0.13 EUR
100+0.058 EUR
1000+0.048 EUR
8000+0.033 EUR
24000+0.03 EUR
48000+0.026 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
RN1105MFV,L3F(CT RN1105MFV,L3F(CT Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=5879&prodName=RN1105MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 26586 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
88+0.2 EUR
163+0.11 EUR
500+0.085 EUR
1000+0.059 EUR
2000+0.049 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH