| Anzahl | Preis |
|---|---|
| 12+ | 0.25 EUR |
| 17+ | 0.17 EUR |
| 100+ | 0.077 EUR |
| 1000+ | 0.069 EUR |
| 3000+ | 0.051 EUR |
| 9000+ | 0.044 EUR |
| 24000+ | 0.04 EUR |
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Technische Details RN1106,LF(CT Toshiba
Description: TRANS PREBIAS NPN 50V 0.1A SSM, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: SSM, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 100 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms, Resistors Included: R1 and R2.
Weitere Produktangebote RN1106,LF(CT nach Preis ab 0.074 EUR bis 0.3 EUR
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RN1106,LF(CT | Hersteller : Toshiba Semiconductor and Storage |
 Description: TRANS PREBIAS NPN 50V 0.1A SSMPackaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SSM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
auf Bestellung 1944 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1106,LF(CT | Hersteller : Toshiba |
TRANS PREBIAS NPN 50V 0.1A SSM Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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RN1106,LF(CT | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSM Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SSM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |