| Anzahl | Privatkunde |
|---|---|
| 12+ | 0.29 EUR |
| 20+ | 0.18 EUR |
| 100+ | 0.11 EUR |
| 500+ | 0.077 EUR |
| 1000+ | 0.061 EUR |
| 5000+ | 0.046 EUR |
| 8000+ | 0.038 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RN1106MFV,L3F(CT Toshiba
Description: TRANS PREBIAS NPN 50V 0.1A VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V, Supplier Device Package: VESM, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote RN1106MFV,L3F(CT nach Preis ab 0.067 EUR bis 0.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RN1106MFV,L3F(CT | Toshiba Semiconductor and Storage |
 Description: TRANS PREBIAS NPN 50V 0.1A VESMResistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 4.7 kOhms Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: VESM DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
auf Bestellung 7990 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RN1106MFV,L3F(CT |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 7990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 56+ | 0.38 EUR |
| 61+ | 0.35 EUR |
| 113+ | 0.19 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.079 EUR |
| 2000+ | 0.067 EUR |