auf Bestellung 26328 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 0.20 EUR |
| 22+ | 0.13 EUR |
| 100+ | 0.06 EUR |
| 1000+ | 0.05 EUR |
| 2500+ | 0.05 EUR |
| 8000+ | 0.04 EUR |
| 24000+ | 0.03 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RN1106MFV,L3F(CT Toshiba
Description: TRANS PREBIAS NPN 50V 0.1A VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V, Supplier Device Package: VESM, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote RN1106MFV,L3F(CT nach Preis ab 0.06 EUR bis 0.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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RN1106MFV,L3F(CT | Hersteller : Toshiba Semiconductor and Storage |
 Description: TRANS PREBIAS NPN 50V 0.1A VESMPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Supplier Device Package: VESM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 7990 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1106MFV,L3F(CT | Hersteller : Toshiba |
NPN Epitaxial Digital BJT |
auf Bestellung 45177 Stücke: Lieferzeit 14-21 Tag (e) |
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| RN1106MFV,L3F(CT | Hersteller : Toshiba |
NPN Epitaxial Digital BJT |
Produkt ist nicht verfügbar |
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RN1106MFV,L3F(CT | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESM Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Supplier Device Package: VESM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |