Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > RN1106MFV,L3F
RN1106MFV,L3F

RN1106MFV,L3F Toshiba Semiconductor and Storage

RN1104MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1104MFV Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8000+0.042 EUR
16000+ 0.036 EUR
24000+ 0.033 EUR
Mindestbestellmenge: 8000
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Technische Details RN1106MFV,L3F Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V 0.1A VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: VESM, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms.

Weitere Produktangebote RN1106MFV,L3F nach Preis ab 0.044 EUR bis 0.26 EUR

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Preis ohne MwSt
RN1106MFV,L3F RN1106MFV,L3F Hersteller : Toshiba Semiconductor and Storage RN1104MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1104MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 53233 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
67+0.26 EUR
98+ 0.18 EUR
179+ 0.098 EUR
500+ 0.077 EUR
1000+ 0.054 EUR
2000+ 0.044 EUR
Mindestbestellmenge: 67
RN1106MFV,L3F RN1106MFV,L3F Hersteller : Toshiba RN1106MFV_datasheet_en_20210818-1111756.pdf Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
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