RN1106MFV,L3XHF(CT

RN1106MFV,L3XHF(CT Toshiba Semiconductor and Storage


docget.jsp?did=5879&prodName=RN1106MFV Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN Q1BSR=4.7K, Q1BER
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 8000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.09 EUR
Mindestbestellmenge: 8000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN1106MFV,L3XHF(CT Toshiba Semiconductor and Storage

Description: AUTO AEC-Q NPN Q1BSR=4.7K, Q1BER, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V, Supplier Device Package: VESM, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms.

Weitere Produktangebote RN1106MFV,L3XHF(CT nach Preis ab 0.08 EUR bis 0.60 EUR

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RN1106MFV,L3XHF(CT RN1106MFV,L3XHF(CT Hersteller : Toshiba RN1106MFV_datasheet_en_20210818-1111756.pdf Digital Transistors AUTO AEC-Q NPN Q1BSR=4.7kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-723)
auf Bestellung 42330 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+0.45 EUR
10+0.41 EUR
100+0.28 EUR
500+0.17 EUR
1000+0.12 EUR
2500+0.11 EUR
5000+0.08 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
RN1106MFV,L3XHF(CT RN1106MFV,L3XHF(CT Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=5879&prodName=RN1106MFV Description: AUTO AEC-Q NPN Q1BSR=4.7K, Q1BER
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.60 EUR
36+0.49 EUR
100+0.26 EUR
500+0.17 EUR
1000+0.12 EUR
2000+0.11 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH