RN1106MFV,L3XHF(CT Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN Q1BSR=4.7K, Q1BER
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
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Technische Details RN1106MFV,L3XHF(CT Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN Q1BSR=4.7K, Q1BER, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 4.7 kOhms, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: VESM, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).
Weitere Produktangebote RN1106MFV,L3XHF(CT nach Preis ab 0.083 EUR bis 0.71 EUR
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RN1106MFV,L3XHF(CT | Toshiba |
Digital Transistors AUTO AEC-Q NPN Q1BSR=4.7kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-723) |
auf Bestellung 41880 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1106MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q NPN Q1BSR=4.7K, Q1BER Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 4.7 kOhms Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: VESM DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1106MFV,L3XHF(CT |
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Hersteller: Toshiba
Digital Transistors AUTO AEC-Q NPN Q1BSR=4.7kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-723)
Digital Transistors AUTO AEC-Q NPN Q1BSR=4.7kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-723)
auf Bestellung 41880 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 0.49 EUR |
| 10+ | 0.4 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.14 EUR |
| 2500+ | 0.13 EUR |
| 5000+ | 0.083 EUR |
| RN1106MFV,L3XHF(CT |
|
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN Q1BSR=4.7K, Q1BER
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Description: AUTO AEC-Q NPN Q1BSR=4.7K, Q1BER
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 0.71 EUR |
| 36+ | 0.58 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.14 EUR |
| 2000+ | 0.13 EUR |