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RN1110MFV,L3F Toshiba


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Hersteller: Toshiba
Digital Transistors Bias Resistor Built-in Transistor
auf Bestellung 13234 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+0.31 EUR
19+0.18 EUR
100+0.11 EUR
500+0.083 EUR
1000+0.065 EUR
5000+0.05 EUR
8000+0.048 EUR
Mindestbestellmenge: 11 Stücke
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Technische Details RN1110MFV,L3F Toshiba

Description: TRANS PREBIAS NPN 50V 0.1A VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Supplier Device Package: VESM, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Resistor - Base (R1): 4.7 kOhms, Resistors Included: R1 Only.

Weitere Produktangebote RN1110MFV,L3F nach Preis ab 0.063 EUR bis 0.31 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
RN1110MFV,L3F RN1110MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=5881&prodName=RN1110MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
auf Bestellung 7851 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.31 EUR
114+0.18 EUR
186+0.11 EUR
500+0.082 EUR
1000+0.073 EUR
2000+0.063 EUR
Mindestbestellmenge: 67 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1110MFV,L3F docget.jsp?did=5881&prodName=RN1110MFV
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
auf Bestellung 7851 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
114+0.18 EUR
186+0.11 EUR
500+0.082 EUR
1000+0.073 EUR
2000+0.063 EUR
Mindestbestellmenge: 67 Stücke
Im Einkaufswagen  Stück im Wert von  UAH