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RN1110MFV,L3F

RN1110MFV,L3F Toshiba

RN1110MFV_datasheet_en_20181221-1115982.pdf Hersteller: Toshiba
Digital Transistors Bias Resistor Built-in Transistor
auf Bestellung 15234 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+0.25 EUR
20+0.15 EUR
100+0.092 EUR
500+0.067 EUR
1000+0.049 EUR
2500+0.048 EUR
8000+0.04 EUR
Mindestbestellmenge: 12
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Technische Details RN1110MFV,L3F Toshiba

Description: TRANS PREBIAS NPN 50V 0.1A VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Supplier Device Package: VESM, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Resistor - Base (R1): 4.7 kOhms, Resistors Included: R1 Only.

Weitere Produktangebote RN1110MFV,L3F nach Preis ab 0.051 EUR bis 0.25 EUR

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Preis
RN1110MFV,L3F RN1110MFV,L3F Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=5881&prodName=RN1110MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
auf Bestellung 7900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
120+0.15 EUR
192+0.092 EUR
500+0.066 EUR
1000+0.058 EUR
2000+0.051 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
RN1110MFV,L3F RN1110MFV,L3F Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=5881&prodName=RN1110MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
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Im Einkaufswagen  Stück im Wert von  UAH