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RN1110MFV,L3F

RN1110MFV,L3F Toshiba Semiconductor and Storage

rn1110mfv_rn1111mfv_.pdf Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8000+0.046 EUR
Mindestbestellmenge: 8000
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Technische Details RN1110MFV,L3F Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V 0.1A VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Supplier Device Package: VESM, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Resistor - Base (R1): 4.7 kOhms.

Weitere Produktangebote RN1110MFV,L3F nach Preis ab 0.032 EUR bis 0.28 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RN1110MFV,L3F RN1110MFV,L3F Hersteller : Toshiba RN1110MFV_datasheet_en_20181221-1115982.pdf Digital Transistors Bias Resistor Built-in Transistor
auf Bestellung 15354 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+0.28 EUR
14+ 0.21 EUR
100+ 0.088 EUR
1000+ 0.051 EUR
2500+ 0.044 EUR
8000+ 0.039 EUR
24000+ 0.032 EUR
Mindestbestellmenge: 11
RN1110MFV,L3F RN1110MFV,L3F Hersteller : Toshiba Semiconductor and Storage rn1110mfv_rn1111mfv_.pdf Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
63+0.28 EUR
87+ 0.2 EUR
163+ 0.11 EUR
500+ 0.085 EUR
1000+ 0.059 EUR
2000+ 0.049 EUR
Mindestbestellmenge: 63