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RN1112MFV,L3F

RN1112MFV,L3F Toshiba Semiconductor and Storage

RN1112MFV_datasheet_en_20190107.pdf?did=5887&prodName=RN1112MFV Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.036 EUR
Mindestbestellmenge: 8000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN1112MFV,L3F Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V 0.1A VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Supplier Device Package: VESM, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Resistor - Base (R1): 22 kOhms.

Weitere Produktangebote RN1112MFV,L3F nach Preis ab 0.045 EUR bis 0.16 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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RN1112MFV,L3F RN1112MFV,L3F Hersteller : Toshiba Semiconductor and Storage RN1112MFV_datasheet_en_20190107.pdf?did=5887&prodName=RN1112MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
159+0.11 EUR
238+0.074 EUR
500+0.056 EUR
1000+0.05 EUR
2000+0.045 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
RN1112MFV,L3F Hersteller : Toshiba RN1112MFV_datasheet_en_20190107-1115665.pdf Bipolar Transistors - Pre-Biased 22kohm 50V 0.1A SOT-723
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH