RN1113ACT(TPL3)

RN1113ACT(TPL3) Toshiba Semiconductor and Storage


Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 47 kOhms
auf Bestellung 9990 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
32+0.56 EUR
45+ 0.49 EUR
100+ 0.25 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
2000+ 0.13 EUR
5000+ 0.12 EUR
Mindestbestellmenge: 32
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Technische Details RN1113ACT(TPL3) Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V 0.08A CST3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Supplier Device Package: CST3, Part Status: Active, Current - Collector (Ic) (Max): 80 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 100 mW, Resistor - Base (R1): 47 kOhms.

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RN1113ACT(TPL3) RN1113ACT(TPL3) Hersteller : Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V 0.08A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 47 kOhms
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