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RN1114MFV,L3F

RN1114MFV,L3F Toshiba Semiconductor and Storage

docget.jsp?did=721&prodName=RN1114MFV
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
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67+0.31 EUR
105+0.2 EUR
169+0.12 EUR
500+0.09 EUR
1000+0.08 EUR
2000+0.07 EUR
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Technische Details RN1114MFV,L3F Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V 0.1A VESM, Resistors Included: R1 and R2, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 1 kOhms, Frequency - Transition: 250 MHz, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: VESM, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).

Weitere Produktangebote RN1114MFV,L3F

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
RN1114MFV,L3F RN1114MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=721&prodName=RN1114MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1114MFV,L3F RN1114MFV,L3F Toshiba RN1114MFV_datasheet_en_20241118-1116030.pdf Digital Transistors Bias Resistor Built-in Transistor
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1114MFV,L3F docget.jsp?did=721&prodName=RN1114MFV
RN1114MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1114MFV,L3F RN1114MFV_datasheet_en_20241118-1116030.pdf
RN1114MFV,L3F
Hersteller: Toshiba
Digital Transistors Bias Resistor Built-in Transistor
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH