| Anzahl | Privatkunde |
|---|---|
| 10+ | 0.35 EUR |
| 16+ | 0.21 EUR |
| 100+ | 0.099 EUR |
| 1000+ | 0.074 EUR |
| 3000+ | 0.067 EUR |
| 9000+ | 0.057 EUR |
| 24000+ | 0.046 EUR |
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Technische Details RN1115,LF(CT Toshiba
Description: TRANS PREBIAS NPN 50V 0.1A SSM, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 250 MHz, Power - Max: 100 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Packaging: Tape & Reel (TR), Resistors Included: R1 and R2, Supplier Device Package: SSM, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416.
Weitere Produktangebote RN1115,LF(CT nach Preis ab 0.087 EUR bis 0.36 EUR
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RN1115,LF(CT | Toshiba Semiconductor and Storage |
 Description: TRANS PREBIAS NPN 50V 0.1A SSMResistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Packaging: Cut Tape (CT) Resistors Included: R1 and R2 Supplier Device Package: SSM DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 |
auf Bestellung 2783 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RN1115,LF(CT |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
auf Bestellung 2783 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 59+ | 0.36 EUR |
| 97+ | 0.21 EUR |
| 155+ | 0.13 EUR |
| 500+ | 0.099 EUR |
| 1000+ | 0.087 EUR |