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RN1115,LF(CT

RN1115,LF(CT Toshiba

RN1115_datasheet_en_20210830-1116043.pdf
Hersteller: Toshiba
Digital Transistors Bias Resistor with Built-in Transistor
auf Bestellung 11609 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+0.29 EUR
16+0.18 EUR
100+0.083 EUR
1000+0.062 EUR
3000+0.056 EUR
9000+0.048 EUR
24000+0.039 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN1115,LF(CT Toshiba

Description: TRANS PREBIAS NPN 50V 0.1A SSM, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 250 MHz, Power - Max: 100 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Packaging: Tape & Reel (TR), Resistors Included: R1 and R2, Supplier Device Package: SSM, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416.

Weitere Produktangebote RN1115,LF(CT nach Preis ab 0.073 EUR bis 0.3 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RN1115,LF(CT RN1115,LF(CT Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=18763&prodName=RN1118 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
auf Bestellung 2783 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
97+0.18 EUR
155+0.11 EUR
500+0.083 EUR
1000+0.073 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
RN1115,LF(CT RN1115,LF(CT Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=18763&prodName=RN1118 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Packaging: Tape & Reel (TR)
Resistors Included: R1 and R2
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH