RN1116(TE85L,F) Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V 0.1A SSM, Package / Case: SC-75, SOT-416, Packaging: Tape & Reel (TR), Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 4.7 kOhms, Frequency - Transition: 250 MHz, Power - Max: 100 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: SSM, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount.