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RN1117(TE85L,F) Toshiba


rn1115_datasheet_en_20210830.pdf
Hersteller: Toshiba
Trans Digital BJT NPN 50V 100mA 100mW 3-Pin SSM T/R
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
957+0.18 EUR
1241+0.14 EUR
1380+0.12 EUR
Mindestbestellmenge: 957 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN1117(TE85L,F) Toshiba

Description: TRANS PREBIAS NPN 50V 0.1A SSM, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V, Supplier Device Package: SSM, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 100 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms.

Weitere Produktangebote RN1117(TE85L,F) nach Preis ab 0.13 EUR bis 0.38 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
RN1117(TE85L,F) RN1117(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18763&prodName=RN1118 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 898 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.38 EUR
84+0.25 EUR
124+0.17 EUR
500+0.13 EUR
Mindestbestellmenge: 56 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1117(TE85L,F) docget.jsp?did=18763&prodName=RN1118
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 898 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
84+0.25 EUR
124+0.17 EUR
500+0.13 EUR
Mindestbestellmenge: 56 Stücke
Im Einkaufswagen  Stück im Wert von  UAH