RN1306,LF

RN1306,LF Toshiba Semiconductor and Storage


docget.jsp?did=18776&prodName=RN1306 Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.05 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN1306,LF Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V 0.1A SC70, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: SC-70, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 100 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms.

Weitere Produktangebote RN1306,LF nach Preis ab 0.04 EUR bis 0.29 EUR

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RN1306,LF RN1306,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=18776&prodName=RN1306 Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 3522 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
113+0.16 EUR
183+0.10 EUR
500+0.07 EUR
1000+0.06 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
RN1306,LF RN1306,LF Hersteller : Toshiba RN1306_datasheet_en_20210824-1760581.pdf Digital Transistors USM TRANSISTOR Pd 100mW F 250Mhz
auf Bestellung 9207 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+0.29 EUR
18+0.17 EUR
100+0.10 EUR
500+0.08 EUR
1000+0.06 EUR
3000+0.05 EUR
9000+0.04 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH