RN1310(TE85L,F) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
| Anzahl | Privatkunde |
|---|---|
| 48+ | 0.44 EUR |
| 80+ | 0.26 EUR |
| 128+ | 0.17 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
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Technische Details RN1310(TE85L,F) Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70, Resistor - Base (R1): 4.7 kOhms, Frequency - Transition: 250 MHz, Power - Max: 100 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SC-70, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).
Weitere Produktangebote RN1310(TE85L,F) nach Preis ab 0.084 EUR bis 0.089 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
| RN1310(TE85L,F) | Toshiba | Trans Digital BJT NPN 50V 100mA 3-Pin USM T/R |
auf Bestellung 2954 Stücke: Lieferzeit 14-21 Tag (e) |
|
| RN1310(TE85L,F) |
Hersteller: Toshiba
Trans Digital BJT NPN 50V 100mA 3-Pin USM T/R
Trans Digital BJT NPN 50V 100mA 3-Pin USM T/R
auf Bestellung 2954 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1954+ | 0.089 EUR |
| 2500+ | 0.084 EUR |