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RN1401,LF

RN1401,LF Toshiba Semiconductor and Storage

docget.jsp?did=18787&prodName=RN1401
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.057 EUR
6000+0.051 EUR
9000+0.047 EUR
15000+0.044 EUR
21000+0.042 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN1401,LF Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V 0.1A SMINI, Resistors Included: R1 and R2, Resistor - Emitter Base (R2): 4.7 kOhms, Resistor - Base (R1): 4.7 kOhms, Frequency - Transition: 250 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: S-Mini, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).

Weitere Produktangebote RN1401,LF nach Preis ab 0.049 EUR bis 0.3 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RN1401,LF RN1401,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1401 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 23630 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
100+0.18 EUR
160+0.11 EUR
500+0.081 EUR
1000+0.071 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
RN1401,LF RN1401,LF Hersteller : Toshiba RN1401_datasheet_en_20210830-1132133.pdf Digital Transistors Bias Resistor NPN 100mA 50V 47kohm
auf Bestellung 10822 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+0.3 EUR
16+0.18 EUR
100+0.11 EUR
500+0.083 EUR
1000+0.067 EUR
3000+0.056 EUR
6000+0.049 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
RN1401,LF Hersteller : Toshiba docget.jsp?did=18787&prodName=RN1401 TRANS PREBIAS NPN 50V 0.1A SMINI TO-236 Група товару: Транзистори Од. вим: шт
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH