RN1406,LF

RN1406,LF Toshiba Semiconductor and Storage


docget.jsp?did=18787&prodName=RN1401 Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.086 EUR
Mindestbestellmenge: 3000
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Technische Details RN1406,LF Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V 0.1A SMINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: S-Mini, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms.

Weitere Produktangebote RN1406,LF nach Preis ab 0.06 EUR bis 0.51 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RN1406,LF RN1406,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1401 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 7642 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
53+0.49 EUR
75+ 0.35 EUR
153+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.099 EUR
Mindestbestellmenge: 53
RN1406,LF RN1406,LF Hersteller : Toshiba RN1406_datasheet_en_20210830-1916047.pdf Digital Transistors Bias Resistor NPN 100mA 50V 4.7kohm
auf Bestellung 14793 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
103+0.51 EUR
136+ 0.38 EUR
351+ 0.15 EUR
1000+ 0.1 EUR
3000+ 0.086 EUR
9000+ 0.065 EUR
24000+ 0.06 EUR
Mindestbestellmenge: 103
RN1406,LF RN1406,LF Hersteller : Toshiba rn1404_datasheet_en_20210830.pdf Trans Digital BJT NPN 50V 100mA 200mW 3-Pin S-Mini T/R
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