RN1406,LF

RN1406,LF Toshiba Semiconductor and Storage


docget.jsp?did=18787&prodName=RN1401
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.063 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN1406,LF Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V 0.1A SMINI, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 4.7 kOhms, Frequency - Transition: 250 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: S-Mini, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V.

Weitere Produktangebote RN1406,LF nach Preis ab 0.039 EUR bis 0.32 EUR

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Preis
RN1406,LF RN1406,LF Hersteller : Toshiba RN1406_datasheet_en_20210830-1916047.pdf Digital Transistors Bias Resistor NPN 100mA 50V 4.7kohm
auf Bestellung 828 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+0.23 EUR
18+0.17 EUR
100+0.074 EUR
1000+0.065 EUR
3000+0.049 EUR
9000+0.046 EUR
24000+0.039 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
RN1406,LF RN1406,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1401 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 6742 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
92+0.19 EUR
149+0.12 EUR
500+0.086 EUR
1000+0.076 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH