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RN1412TE85LF

RN1412TE85LF Toshiba


Hersteller: Toshiba
Digital Transistors BRT NPN Single 100mA IC 50V VCEO
auf Bestellung 2994 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+0.33 EUR
13+0.22 EUR
100+0.10 EUR
1000+0.09 EUR
9000+0.08 EUR
24000+0.07 EUR
45000+0.07 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN1412TE85LF Toshiba

Description: TRANS PREBIAS NPN 50V 0.1A SMINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Supplier Device Package: S-Mini, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 22 kOhms.

Weitere Produktangebote RN1412TE85LF nach Preis ab 0.10 EUR bis 0.42 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RN1412TE85LF RN1412TE85LF Hersteller : Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
auf Bestellung 1850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
70+0.25 EUR
112+0.16 EUR
500+0.12 EUR
1000+0.10 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
RN1412TE85LF RN1412TE85LF Hersteller : Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH