RN1416,LXHF Toshiba Semiconductor and Storage


docget.jsp?did=18796&prodName=RN1416
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Resistors Included: R1 and R2
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.094 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details RN1416,LXHF Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V SMINI, Resistors Included: R1 and R2, Grade: Automotive, Supplier Device Package: S-Mini, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 4.7 kOhms, Frequency - Transition: 250 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA.

Weitere Produktangebote RN1416,LXHF nach Preis ab 0.092 EUR bis 0.47 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RN1416,LXHF RN1416,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18796&prodName=RN1416 Description: TRANS PREBIAS NPN 50V SMINI
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 5384 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
62+0.29 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 39 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1416,LXHF RN1416,LXHF Toshiba 4232453039464639443245353137394630324342303936344530454139464635.pdf Digital Transistors AUTO AEC-Q Single NPN Q1BSR=4.7kO, Q1BER=10kO, VCEO=50V, IC=0.1A (SOT-346)
auf Bestellung 8913 Stücke:
Lieferzeit 10-14 Tag (e)
6+0.47 EUR
10+0.29 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
3000+0.1 EUR
6000+0.092 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1416,LXHF docget.jsp?did=18796&prodName=RN1416
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 5384 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
39+0.46 EUR
62+0.29 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 39 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1416,LXHF 4232453039464639443245353137394630324342303936344530454139464635.pdf
Hersteller: Toshiba
Digital Transistors AUTO AEC-Q Single NPN Q1BSR=4.7kO, Q1BER=10kO, VCEO=50V, IC=0.1A (SOT-346)
auf Bestellung 8913 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+0.47 EUR
10+0.29 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
3000+0.1 EUR
6000+0.092 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH