RN1417,LF

RN1417,LF Toshiba Semiconductor and Storage


docget.jsp?did=18796&prodName=RN1415 Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.05 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN1417,LF Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V 0.1A SMINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V, Supplier Device Package: S-Mini, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms.

Weitere Produktangebote RN1417,LF nach Preis ab 0.06 EUR bis 0.25 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RN1417,LF RN1417,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=18796&prodName=RN1415 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 4070 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
113+0.16 EUR
183+0.10 EUR
500+0.07 EUR
1000+0.06 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
RN1417,LF Hersteller : Toshiba 358docget.jsptypedatasheetlangenpidrn1414.jsptypedatasheetlangenpidr.pdf Trans Digital BJT NPN 50V 100mA 200mW 3-Pin S-Mini T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1417,LF RN1417,LF Hersteller : Toshiba RN1417_datasheet_en_20140301-1627380.pdf Bipolar Transistors - Pre-Biased NPN BRT, Q1BSR=10kOhm, Q1BER=4.7kOhm, VCEO=50V, IC=0.1A, inSOT-346 (S-Mini) package
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH