Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > RN1421TE85LF
RN1421TE85LF

RN1421TE85LF Toshiba Semiconductor and Storage

docget.jsp?did=18798&prodName=RN1423 Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
38+0.47 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.2 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN1421TE85LF Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V 0.8A SMINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V, Supplier Device Package: S-Mini, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 300 MHz, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms.

Weitere Produktangebote RN1421TE85LF nach Preis ab 0.12 EUR bis 0.77 EUR

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Preis
RN1421TE85LF RN1421TE85LF Hersteller : Toshiba RN1421_datasheet_en_20210827-1150730.pdf Digital Transistors NPN 50V 0.8A TRANSISTOR LOG
auf Bestellung 4399 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.77 EUR
10+0.48 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
3000+0.12 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
RN1421TE85LF RN1421TE85LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=18798&prodName=RN1423 Description: TRANS PREBIAS NPN 50V 0.8A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 300 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
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Im Einkaufswagen  Stück im Wert von  UAH