auf Bestellung 10737 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 537+ | 0.27 EUR |
| 541+ | 0.26 EUR |
| 620+ | 0.22 EUR |
| 1000+ | 0.2 EUR |
| 3000+ | 0.18 EUR |
| 6000+ | 0.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RN1426TE85LF Toshiba
Description: TRANS PREBIAS NPN 50V 0.8A SMINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V, Supplier Device Package: S-Mini, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 300 MHz, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 10 kOhms.
Weitere Produktangebote RN1426TE85LF nach Preis ab 0.12 EUR bis 0.72 EUR
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RN1426TE85LF | Hersteller : Toshiba |
 Trans Digital BJT NPN 50V 800mA 200mW 3-Pin S-Mini T/R |
auf Bestellung 5938 Stücke: Lieferzeit 14-21 Tag (e) |
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RN1426TE85LF | Hersteller : Toshiba |
Trans Digital BJT NPN 50V 800mA 200mW 3-Pin S-Mini T/R |
auf Bestellung 4707 Stücke: Lieferzeit 14-21 Tag (e) |
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RN1426TE85LF | Hersteller : Toshiba |
Digital Transistors NPN 50V 0.8A TRANSISTOR LOG |
auf Bestellung 5306 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1426TE85LF | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.8A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 300 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 993 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1426TE85LF | Hersteller : Toshiba |
Trans Digital BJT NPN 50V 800mA 200mW 3-Pin S-Mini T/R |
Produkt ist nicht verfügbar |
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RN1426TE85LF | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.8A SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 300 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms |
Produkt ist nicht verfügbar |