auf Bestellung 2858 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
450+ | 0.35 EUR |
500+ | 0.33 EUR |
1000+ | 0.3 EUR |
2500+ | 0.28 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RN1427TE85LF Toshiba
Description: TRANS PREBIAS NPN 50V 0.8A SMINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V, Supplier Device Package: S-Mini, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 300 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 10 kOhms.
Weitere Produktangebote RN1427TE85LF nach Preis ab 0.2 EUR bis 0.89 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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RN1427TE85LF | Hersteller : Toshiba | Trans Digital BJT NPN 50V 800mA 200mW 3-Pin S-Mini T/R |
auf Bestellung 6242 Stücke: Lieferzeit 14-21 Tag (e) |
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RN1427TE85LF | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.8A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 300 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 2832 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1427TE85LF | Hersteller : Toshiba | Digital Transistors NPN 50V 0.8A TRANSISTOR LOG |
auf Bestellung 27659 Stücke: Lieferzeit 14-28 Tag (e) |
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RN1427TE85LF | Hersteller : Toshiba | Trans Digital BJT NPN 50V 800mA 200mW 3-Pin S-Mini T/R |
Produkt ist nicht verfügbar |
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RN1427TE85LF | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.8A SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 300 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms |
Produkt ist nicht verfügbar |