auf Bestellung 545 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 418+ | 0.35 EUR |
| 500+ | 0.32 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RN1427TE85LF Toshiba
Description: TRANS PREBIAS NPN 50V 0.8A SMINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V, Supplier Device Package: S-Mini, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 300 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Resistors Included: R1 and R2.
Weitere Produktangebote RN1427TE85LF nach Preis ab 0.16 EUR bis 0.79 EUR
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RN1427TE85LF | Hersteller : Toshiba |
 Trans Digital BJT NPN 50V 0.8A 200mW 3-Pin S-Mini T/R |
auf Bestellung 826 Stücke: Lieferzeit 14-21 Tag (e) |
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RN1427TE85LF | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.8A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 300 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
auf Bestellung 2329 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1427TE85LF | Hersteller : Toshiba |
Digital Transistors NPN 50V 0.8A TRANSISTOR LOG |
auf Bestellung 11260 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1427TE85LF | Hersteller : Toshiba |
Trans Digital BJT NPN 50V 0.8A 200mW 3-Pin S-Mini T/R |
auf Bestellung 92 Stücke: Lieferzeit 14-21 Tag (e) |
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RN1427TE85LF | Hersteller : Toshiba |
Trans Digital BJT NPN 50V 0.8A 200mW 3-Pin S-Mini T/R |
Produkt ist nicht verfügbar |
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RN1427TE85LF | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.8A SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 300 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |