Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > RN1602(TE85L,F)

RN1602(TE85L,F) Toshiba Semiconductor and Storage

Name: RN1602(TE85L,F)
Brand: Toshiba Semiconductor and Storage
SKU: 4304346-3
Price: 0.19 EUR
Availability: InStock

Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SM6

auf Bestellung 5560 Stücke:

Lieferzeit 21-28 Tag (e)

Anzahl	Preis ohne MwSt
30+	0.88 EUR
43+	0.61 EUR
100+	0.31 EUR
500+	0.25 EUR
1000+	0.19 EUR

Mindestbestellmenge: 30

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Technische Details RN1602(TE85L,F) Toshiba Semiconductor and Storage

Description: TRANS 2NPN PREBIAS 0.3W SM6, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: SM6.

Weitere Produktangebote RN1602(TE85L,F)

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis ohne MwSt
	RN1602(TE85L,F)	Hersteller : Toshiba Semiconductor and Storage	Description: TRANS 2NPN PREBIAS 0.3W SM6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SM6	Produkt ist nicht verfügbar
	RN1602(TE85L,F)	Hersteller : Toshiba	Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V	Produkt ist nicht verfügbar