RN1602(TE85L,F)

RN1602(TE85L,F) Toshiba Semiconductor and Storage


docget.jsp?did=18809&prodName=RN1604
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA SM6
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.099 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Produktbewertung abgeben

Technische Details RN1602(TE85L,F) Toshiba Semiconductor and Storage

Description: TRANS PREBIAS 2NPN 50V 100MA SM6, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 300mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Supplier Device Package: SM6, Resistor - Emitter Base (R2): 10kOhms, Resistor - Base (R1): 10kOhms, Frequency - Transition: 250MHz, Mounting Type: Surface Mount, Package / Case: SC-74, SOT-457, Packaging: Tape & Reel (TR).

Weitere Produktangebote RN1602(TE85L,F) nach Preis ab 0.14 EUR bis 0.53 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RN1602(TE85L,F) RN1602(TE85L,F) Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=18809&prodName=RN1604 Description: TRANS PREBIAS 2NPN 50V 100MA SM6
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
auf Bestellung 9440 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
54+0.33 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
RN1602(TE85L,F) RN1602(TE85L,F) Hersteller : Toshiba RN1602_datasheet_en_20191113-2256528.pdf Digital Transistors BRT NPN 2-in-1 100mA 50V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH