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RN1605TE85LF

RN1605TE85LF Toshiba


RN1605_datasheet_en_20191113-2256554.pdf Hersteller: Toshiba
Digital Transistors BRT NPN 2-in-1 100mA 50V
auf Bestellung 2996 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+0.42 EUR
11+0.27 EUR
100+0.12 EUR
1000+0.11 EUR
3000+0.08 EUR
9000+0.07 EUR
Mindestbestellmenge: 7
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Technische Details RN1605TE85LF Toshiba

Description: TRANS 2NPN PREBIAS 0.3W SM6, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SM6.

Weitere Produktangebote RN1605TE85LF nach Preis ab 0.51 EUR bis 0.51 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RN1605TE85LF RN1605TE85LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=18809&prodName=RN1604 Description: TRANS 2NPN PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
RN1605TE85LF RN1605TE85LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=18809&prodName=RN1604 Description: TRANS 2NPN PREBIAS 0.3W SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
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Im Einkaufswagen  Stück im Wert von  UAH