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RN1607(TE85L,F)

RN1607(TE85L,F) Toshiba Semiconductor and Storage

docget.jsp?did=18811&prodName=RN1607 Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.13 EUR
Mindestbestellmenge: 3000
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Technische Details RN1607(TE85L,F) Toshiba Semiconductor and Storage

Description: TRANS 2NPN PREBIAS 0.3W SM6, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SM6.

Weitere Produktangebote RN1607(TE85L,F) nach Preis ab 0.16 EUR bis 0.74 EUR

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Preis ohne MwSt
RN1607(TE85L,F) RN1607(TE85L,F) Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=18811&prodName=RN1607 Description: TRANS 2NPN PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
auf Bestellung 4271 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
35+ 0.51 EUR
100+ 0.26 EUR
500+ 0.21 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 24
RN1607(TE85L,F) Hersteller : Toshiba docget.jsp?did=18811&prodName=RN1607 Bipolar Transistors - Pre-Biased Gen Trans NPN x 2 SM6, 50V, 100A
auf Bestellung 2215 Stücke:
Lieferzeit 14-28 Tag (e)