RN1607(TE85L,F) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
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Technische Details RN1607(TE85L,F) Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6, Supplier Device Package: SM6, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 10kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 300mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SC-74, SOT-457, Packaging: Tape & Reel (TR).
Weitere Produktangebote RN1607(TE85L,F) nach Preis ab 0.13 EUR bis 0.71 EUR
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RN1607(TE85L,F) | Toshiba |
Digital Transistors Gen Trans NPN x 2 SM6, 50V, 100A |
auf Bestellung 4650 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1607(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.3W SM6 Supplier Device Package: SM6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RN1607(TE85L,F) |
|
Hersteller: Toshiba
Digital Transistors Gen Trans NPN x 2 SM6, 50V, 100A
Digital Transistors Gen Trans NPN x 2 SM6, 50V, 100A
auf Bestellung 4650 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.69 EUR |
| 10+ | 0.43 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.18 EUR |
| 3000+ | 0.14 EUR |
| 6000+ | 0.13 EUR |
| RN1607(TE85L,F) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Description: TRANS 2NPN PREBIAS 0.3W SM6
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 0.71 EUR |
| 49+ | 0.43 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.18 EUR |