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RN1609(TE85L,F)

RN1609(TE85L,F) Toshiba

RN1609_datasheet_en_20191113-1608979.pdf
Hersteller: Toshiba
Digital Transistors SM6 PLN (LF) TRANSISTOR Pd 300mW F 250MHz
auf Bestellung 3000 Stücke:
Lieferzeit 98-102 Tag (e)
Anzahl Preis
7+0.47 EUR
10+0.31 EUR
100+0.18 EUR
1000+0.15 EUR
3000+0.12 EUR
9000+0.1 EUR
24000+0.097 EUR
Mindestbestellmenge: 7
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Technische Details RN1609(TE85L,F) Toshiba

Description: TRANS 2NPN PREBIAS 0.3W SM6, Supplier Device Package: SM6, Resistor - Emitter Base (R2): 22kOhms, Resistor - Base (R1): 47kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 300mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SC-74, SOT-457, Packaging: Tape & Reel (TR).

Weitere Produktangebote RN1609(TE85L,F) nach Preis ab 0.15 EUR bis 0.6 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RN1609(TE85L,F) RN1609(TE85L,F) Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=18811&prodName=RN1607 Description: TRANS 2NPN PREBIAS 0.3W SM6
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
auf Bestellung 2935 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
48+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
RN1609(TE85L,F) RN1609(TE85L,F) Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=18811&prodName=RN1607 Description: TRANS 2NPN PREBIAS 0.3W SM6
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH