RN1609(TE85L,F) Toshiba
auf Bestellung 3000 Stücke:
Lieferzeit 98-102 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 0.47 EUR |
| 10+ | 0.31 EUR |
| 100+ | 0.18 EUR |
| 1000+ | 0.15 EUR |
| 3000+ | 0.12 EUR |
| 9000+ | 0.10 EUR |
| 24000+ | 0.10 EUR |
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Technische Details RN1609(TE85L,F) Toshiba
Description: TRANS 2NPN PREBIAS 0.3W SM6, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 47kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: SM6.
Weitere Produktangebote RN1609(TE85L,F) nach Preis ab 0.12 EUR bis 0.60 EUR
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RN1609(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
 Description: TRANS 2NPN PREBIAS 0.3W SM6Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SM6 |
auf Bestellung 2935 Stücke: Lieferzeit 10-14 Tag (e) |
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| RN1609(TE85L,F) | Hersteller : Toshiba |
RN1609(TE85L,F) |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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RN1609(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.3W SM6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SM6 |
Produkt ist nicht verfügbar |