RN1701,LF

RN1701,LF Toshiba Semiconductor and Storage


docget.jsp?did=18817&prodName=RN1701 Hersteller: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR4.7KOHM Q1BER4.7K
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: USV
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.08 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN1701,LF Toshiba Semiconductor and Storage

Description: NPNX2 BRT Q1BSR4.7KOHM Q1BER4.7K, Packaging: Tape & Reel (TR), Package / Case: 5-TSSOP, SC-70-5, SOT-353, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 4.7kOhms, Supplier Device Package: USV.

Weitere Produktangebote RN1701,LF nach Preis ab 0.06 EUR bis 0.48 EUR

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RN1701,LF RN1701,LF Hersteller : Toshiba RN1701_datasheet_en_20191003-1627196.pdf Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=4.7kOhm, Q1BER=4.7kOhm, Q2BSR=4.7kOhm, Q2BER=4.7kOhm, VCEO=50V, IC=0.1A
auf Bestellung 5200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.48 EUR
10+0.39 EUR
100+0.21 EUR
500+0.14 EUR
1000+0.09 EUR
3000+0.07 EUR
9000+0.06 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
RN1701,LF RN1701,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=18817&prodName=RN1701 Description: NPNX2 BRT Q1BSR4.7KOHM Q1BER4.7K
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: USV
auf Bestellung 6359 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
55+0.32 EUR
112+0.16 EUR
500+0.13 EUR
1000+0.09 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH