RN1703JE(TE85L,F) Toshiba
| Anzahl | Preis |
|---|---|
| 5+ | 0.58 EUR |
| 10+ | 0.36 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.13 EUR |
| 2000+ | 0.11 EUR |
| 4000+ | 0.099 EUR |
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Technische Details RN1703JE(TE85L,F) Toshiba
Description: TRANS PREBIAS 2NPN 50V 100MA ESV, Packaging: Tape & Reel (TR), Package / Case: SOT-553, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: ESV.
Weitere Produktangebote RN1703JE(TE85L,F) nach Preis ab 0.15 EUR bis 0.58 EUR
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RN1703JE(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
 Description: TRANS PREBIAS 2NPN 50V 100MA ESVPackaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: ESV |
auf Bestellung 1813 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1703JE(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2NPN 50V 100MA ESV Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: ESV |
Produkt ist nicht verfügbar |