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RN1706JE(TE85L,F)

RN1706JE(TE85L,F) Toshiba

RN1706JE_datasheet_en_20140301-1628519.pdf Hersteller: Toshiba
Digital Transistors Gen Trans NPN x 2 ESV, 50V, 100A
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47+1.11 EUR
64+ 0.82 EUR
112+ 0.47 EUR
1000+ 0.24 EUR
4000+ 0.2 EUR
8000+ 0.16 EUR
24000+ 0.15 EUR
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Technische Details RN1706JE(TE85L,F) Toshiba

Description: TRANS 2NPN PREBIAS 0.1W ESV, Packaging: Cut Tape (CT), Package / Case: SOT-553, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: ESV, Part Status: Active.

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RN1706JE(TE85L,F) RN1706JE(TE85L,F) Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=19121&prodName=RN1701JE Description: TRANS 2NPN PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
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