auf Bestellung 3748 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.67 EUR |
| 10+ | 0.58 EUR |
| 100+ | 0.36 EUR |
| 1000+ | 0.24 EUR |
| 4000+ | 0.20 EUR |
| 8000+ | 0.10 EUR |
| 24000+ | 0.10 EUR |
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Technische Details RN1706JE(TE85L,F) Toshiba
Description: TRANS 2NPN PREBIAS 0.1W ESV, Packaging: Cut Tape (CT), Package / Case: SOT-553, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: ESV, Part Status: Active.
Weitere Produktangebote RN1706JE(TE85L,F)
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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RN1706JE(TE85L,F) | Hersteller : Toshiba |
 Trans Digital BJT NPN 50V 100mA 100mW 5-Pin ESV T/R |
Produkt ist nicht verfügbar |
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RN1706JE(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.1W ESV Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ESV Part Status: Active |
Produkt ist nicht verfügbar |