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RN1706JE(TE85L,F)

RN1706JE(TE85L,F) Toshiba

E0103888562E2C2491F3715ACAA910A38882C6E97A76D21EFA7DB820F74619BF.pdf
Hersteller: Toshiba
Digital Transistors Gen Trans NPN x 2 ESV, 50V, 100A
auf Bestellung 3315 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.7 EUR
10+0.59 EUR
100+0.44 EUR
500+0.3 EUR
1000+0.22 EUR
2000+0.2 EUR
4000+0.13 EUR
Mindestbestellmenge: 5
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Technische Details RN1706JE(TE85L,F) Toshiba

Description: TRANS 2NPN PREBIAS 0.1W ESV, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 100mW, Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Mounting Type: Surface Mount, Package / Case: SOT-553, Packaging: Cut Tape (CT), Part Status: Active, Supplier Device Package: ESV, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 4.7kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO).

Weitere Produktangebote RN1706JE(TE85L,F)

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RN1706JE(TE85L,F) RN1706JE(TE85L,F) Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=19121&prodName=RN1701JE Description: TRANS 2NPN PREBIAS 0.1W ESV
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
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