RN1707JE(TE85L,F) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: NPN X 2 BRT Q1BSR=10KOHM Q1BER=4
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.13 EUR |
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Technische Details RN1707JE(TE85L,F) Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=4, Packaging: Tape & Reel (TR), Package / Case: SOT-553, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: ESV, Part Status: Active.
Weitere Produktangebote RN1707JE(TE85L,F) nach Preis ab 0.09 EUR bis 0.70 EUR
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RN1707JE(TE85L,F) | Hersteller : Toshiba |
Bipolar Transistors - Pre-Biased NPN x 2 BRT SOT-553 50V |
auf Bestellung 3988 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1707JE(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=4 Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ESV Part Status: Active |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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