Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > RN1709,LF
RN1709,LF

RN1709,LF Toshiba Semiconductor and Storage

Hersteller: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.079 EUR
Mindestbestellmenge: 3000
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Technische Details RN1709,LF Toshiba Semiconductor and Storage

Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOH, Packaging: Tape & Reel (TR), Package / Case: 5-TSSOP, SC-70-5, SOT-353, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 47kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: USV.

Weitere Produktangebote RN1709,LF nach Preis ab 0.06 EUR bis 0.49 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RN1709,LF RN1709,LF Hersteller : Toshiba Semiconductor and Storage Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
39+0.46 EUR
55+ 0.32 EUR
113+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.091 EUR
Mindestbestellmenge: 39
RN1709,LF RN1709,LF Hersteller : Toshiba RN1709_datasheet_en_20191030-1627332.pdf Bipolar Transistors - Pre-Biased NPN x 2 BRT, Q1BSR=47kOhm, Q1BER=22kOhm, Q2BSR=47kOhm, Q2BER=22kOhm, VCEO=50V, IC=0.1A
auf Bestellung 8899 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+0.49 EUR
10+ 0.44 EUR
100+ 0.24 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
3000+ 0.072 EUR
9000+ 0.06 EUR
Mindestbestellmenge: 6