RN1710,LF Toshiba
Hersteller: ToshibaDigital Transistors NPN x 2 BRT, Q1BSR=4.7kOhm, Q1BER=Inf.kOhm, Q2BSR=4.7kOhm, Q2BER=Inf.kOhm, VCEO=50V, IC=0.1A
auf Bestellung 8788 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 0.46 EUR |
| 10+ | 0.32 EUR |
| 100+ | 0.13 EUR |
| 1000+ | 0.09 EUR |
| 3000+ | 0.081 EUR |
| 9000+ | 0.058 EUR |
| 45000+ | 0.053 EUR |
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Technische Details RN1710,LF Toshiba
Description: NPNX2 BRT Q1BSR4.7KOHM Q1BERINF., Packaging: Tape & Reel (TR), Package / Case: 5-TSSOP, SC-70-5, SOT-353, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 4.7kOhms, Supplier Device Package: USV.
Weitere Produktangebote RN1710,LF nach Preis ab 0.091 EUR bis 0.46 EUR
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RN1710,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR4.7KOHM Q1BERINF. Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: USV |
auf Bestellung 1825 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1710,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR4.7KOHM Q1BERINF. Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: USV |
Produkt ist nicht verfügbar |