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RN1710,LF

RN1710,LF Toshiba


RN1710_datasheet_en_20140301-1627359.pdf Hersteller: Toshiba
Digital Transistors NPN x 2 BRT, Q1BSR=4.7kOhm, Q1BER=Inf.kOhm, Q2BSR=4.7kOhm, Q2BER=Inf.kOhm, VCEO=50V, IC=0.1A
auf Bestellung 8788 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+0.46 EUR
10+0.32 EUR
100+0.13 EUR
1000+0.09 EUR
3000+0.08 EUR
9000+0.06 EUR
45000+0.05 EUR
Mindestbestellmenge: 7
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Technische Details RN1710,LF Toshiba

Description: NPNX2 BRT Q1BSR4.7KOHM Q1BERINF., Packaging: Tape & Reel (TR), Package / Case: 5-TSSOP, SC-70-5, SOT-353, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 4.7kOhms, Supplier Device Package: USV.

Weitere Produktangebote RN1710,LF nach Preis ab 0.09 EUR bis 0.46 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RN1710,LF RN1710,LF Hersteller : Toshiba Semiconductor and Storage Description: NPNX2 BRT Q1BSR4.7KOHM Q1BERINF.
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: USV
auf Bestellung 1825 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
55+0.32 EUR
113+0.16 EUR
500+0.13 EUR
1000+0.09 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
RN1710,LF RN1710,LF Hersteller : Toshiba Semiconductor and Storage Description: NPNX2 BRT Q1BSR4.7KOHM Q1BERINF.
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: USV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH