auf Bestellung 3899 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 52+ | 1 EUR |
| 70+ | 0.75 EUR |
| 123+ | 0.42 EUR |
| 500+ | 0.28 EUR |
| 1000+ | 0.22 EUR |
| 4000+ | 0.18 EUR |
| 8000+ | 0.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RN1711JE(TE85L,F) Toshiba
Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH, Packaging: Tape & Reel (TR), Package / Case: SOT-553, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 10kOhms, Supplier Device Package: ESV, Part Status: Active.
Weitere Produktangebote RN1711JE(TE85L,F) nach Preis ab 0.19 EUR bis 1.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RN1711JE(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
 Description: TRANSISTOR NPN X2 BRT Q1BSR10KOHPackaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Supplier Device Package: ESV Part Status: Active |
auf Bestellung 3880 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||
|
|
RN1711JE(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Supplier Device Package: ESV Part Status: Active |
Produkt ist nicht verfügbar |