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RN1711JE(TE85L,F)

RN1711JE(TE85L,F) Toshiba Semiconductor and Storage

RN1711JE_datasheet_en_20140301.pdf?did=19128&prodName=RN1711JE
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH
Part Status: Active
Supplier Device Package: ESV
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
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Technische Details RN1711JE(TE85L,F) Toshiba Semiconductor and Storage

Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH, Part Status: Active, Supplier Device Package: ESV, Resistor - Base (R1): 10kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 100mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SOT-553, Packaging: Tape & Reel (TR).

Weitere Produktangebote RN1711JE(TE85L,F)

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
RN1711JE(TE85L,F) RN1711JE(TE85L,F) Toshiba Semiconductor and Storage RN1711JE_datasheet_en_20140301.pdf?did=19128&prodName=RN1711JE Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH
Part Status: Active
Supplier Device Package: ESV
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1711JE(TE85L,F) RN1711JE(TE85L,F) Toshiba E27F07BEADAFFA13DEEEC41FAAAEC5E35C6830A6E5FF434A08BDEE6BA4700FF1.pdf Digital Transistors TRANS-SS NPN SOT323 50V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1711JE(TE85L,F) RN1711JE_datasheet_en_20140301.pdf?did=19128&prodName=RN1711JE
RN1711JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH
Part Status: Active
Supplier Device Package: ESV
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1711JE(TE85L,F) E27F07BEADAFFA13DEEEC41FAAAEC5E35C6830A6E5FF434A08BDEE6BA4700FF1.pdf
RN1711JE(TE85L,F)
Hersteller: Toshiba
Digital Transistors TRANS-SS NPN SOT323 50V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH