| Anzahl | Preis |
|---|---|
| 5+ | 0.68 EUR |
| 10+ | 0.51 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.15 EUR |
| 4000+ | 0.12 EUR |
| 8000+ | 0.11 EUR |
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Technische Details RN1711JE(TE85L,F) Toshiba
Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH, Part Status: Active, Supplier Device Package: ESV, Resistor - Base (R1): 10kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 100mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SOT-553, Packaging: Tape & Reel (TR).
Weitere Produktangebote RN1711JE(TE85L,F) nach Preis ab 0.12 EUR bis 0.69 EUR
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RN1711JE(TE85L,F) | Toshiba Semiconductor and Storage |
 Description: TRANSISTOR NPN X2 BRT Q1BSR10KOHPart Status: Active Supplier Device Package: ESV Resistor - Base (R1): 10kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Cut Tape (CT) |
auf Bestellung 3880 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RN1711JE(TE85L,F) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH
Part Status: Active
Supplier Device Package: ESV
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH
Part Status: Active
Supplier Device Package: ESV
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 3880 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 26+ | 0.69 EUR |
| 37+ | 0.48 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.15 EUR |
| 2000+ | 0.12 EUR |