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RN1711JE(TE85L,F)

RN1711JE(TE85L,F) Toshiba Semiconductor and Storage

RN1711JE_datasheet_en_20140301.pdf?did=19128&prodName=RN1711JE
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ESV
Part Status: Active
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Technische Details RN1711JE(TE85L,F) Toshiba Semiconductor and Storage

Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH, Packaging: Tape & Reel (TR), Package / Case: SOT-553, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 10kOhms, Supplier Device Package: ESV, Part Status: Active.

Weitere Produktangebote RN1711JE(TE85L,F)

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
RN1711JE(TE85L,F) RN1711JE(TE85L,F) Toshiba Semiconductor and Storage RN1711JE_datasheet_en_20140301.pdf?did=19128&prodName=RN1711JE Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ESV
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1711JE(TE85L,F) RN1711JE(TE85L,F) Toshiba E27F07BEADAFFA13DEEEC41FAAAEC5E35C6830A6E5FF434A08BDEE6BA4700FF1.pdf Digital Transistors TRANS-SS NPN SOT323 50V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1711JE(TE85L,F) RN1711JE_datasheet_en_20140301.pdf?did=19128&prodName=RN1711JE
RN1711JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ESV
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1711JE(TE85L,F) E27F07BEADAFFA13DEEEC41FAAAEC5E35C6830A6E5FF434A08BDEE6BA4700FF1.pdf
RN1711JE(TE85L,F)
Hersteller: Toshiba
Digital Transistors TRANS-SS NPN SOT323 50V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH