RN1903,LF(CT Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 40+ | 0.65 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RN1903,LF(CT Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: US6.
Weitere Produktangebote RN1903,LF(CT
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
RN1903,LF(CT | Hersteller : Toshiba |
Trans Digital BJT NPN 50V 100mA 200mW Automotive AEC-Q101 6-Pin US T/R |
Produkt ist nicht verfügbar |
|
 |
RN1903,LF(CT | Hersteller : Toshiba |
Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) |
Produkt ist nicht verfügbar |
|
|
|
RN1903,LF(CT | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.2W US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: US6 |
Produkt ist nicht verfügbar |
|
 |
RN1903,LF(CT | Hersteller : Toshiba |
Bipolar Transistors - Pre-Biased BIAS RESISTOR Built- in Transistor 2-in-1 |
Produkt ist nicht verfügbar |