Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > RN1903FE,LXHF(CT
RN1903FE,LXHF(CT

RN1903FE,LXHF(CT Toshiba Semiconductor and Storage

RN1903FE_datasheet_en_20211223.pdf?did=19130&prodName=RN1903FE
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR NPNX2 Q1BSR=22KOHM
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.15 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN1903FE,LXHF(CT Toshiba Semiconductor and Storage

Description: AUTO AEC-Q TR NPNX2 Q1BSR=22KOHM, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: ES6, Resistor - Emitter Base (R2): 22kOhms, Resistor - Base (R1): 22kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 100mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).

Weitere Produktangebote RN1903FE,LXHF(CT nach Preis ab 0.13 EUR bis 0.77 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
RN1903FE,LXHF(CT RN1903FE,LXHF(CT Toshiba Semiconductor and Storage RN1903FE_datasheet_en_20211223.pdf?did=19130&prodName=RN1903FE Description: AUTO AEC-Q TR NPNX2 Q1BSR=22KOHM
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.71 EUR
42+0.5 EUR
100+0.25 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.15 EUR
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1903FE,LXHF(CT RN1903FE,LXHF(CT Toshiba 82414B76328D132407E245EF5C3A06C4CB2217447DBEF2F4584315059F214183.pdf Digital Transistors AUTO AEC-Q TR NPNx2 Q1BSR=22kOhm Q1BER=22kOhm Q2BSR=22kOhm Q2BER=22kOhm VCEO=50V IC=0.1A (SOT-563)
auf Bestellung 7190 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.77 EUR
10+0.48 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
2000+0.18 EUR
4000+0.13 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1903FE,LXHF(CT RN1903FE_datasheet_en_20211223.pdf?did=19130&prodName=RN1903FE
RN1903FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR NPNX2 Q1BSR=22KOHM
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
42+0.5 EUR
100+0.25 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.15 EUR
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1903FE,LXHF(CT 82414B76328D132407E245EF5C3A06C4CB2217447DBEF2F4584315059F214183.pdf
RN1903FE,LXHF(CT
Hersteller: Toshiba
Digital Transistors AUTO AEC-Q TR NPNx2 Q1BSR=22kOhm Q1BER=22kOhm Q2BSR=22kOhm Q2BER=22kOhm VCEO=50V IC=0.1A (SOT-563)
auf Bestellung 7190 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+0.77 EUR
10+0.48 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
2000+0.18 EUR
4000+0.13 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH