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RN1905FE,LF(CT

RN1905FE,LF(CT Toshiba Semiconductor and Storage

RN1901FE_datasheet_en_20211223.pdf?did=19130&prodName=RN1901FE
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 1080 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
81+0.22 EUR
131+0.14 EUR
500+0.099 EUR
1000+0.087 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN1905FE,LF(CT Toshiba Semiconductor and Storage

Description: TRANS 2NPN PREBIAS 0.1W ES6, Supplier Device Package: ES6, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 2.2kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 100mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).

Weitere Produktangebote RN1905FE,LF(CT nach Preis ab 0.062 EUR bis 0.36 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RN1905FE,LF(CT RN1905FE,LF(CT Hersteller : Toshiba 349C2AE1B3EF655FF02AE254CE3ED96EE01B15E530D1A9EB5C71072B117E8CFC.pdf Digital Transistors Bias Resistor Built-in transistor
auf Bestellung 2841 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+0.36 EUR
13+0.22 EUR
100+0.14 EUR
500+0.1 EUR
1000+0.09 EUR
2000+0.081 EUR
4000+0.062 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
RN1905FE,LF(CT RN1905FE,LF(CT Hersteller : Toshiba Semiconductor and Storage RN1901FE_datasheet_en_20211223.pdf?did=19130&prodName=RN1901FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH