auf Bestellung 11950 Stücke:
Lieferzeit 66-80 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 80+ | 0.65 EUR |
| 119+ | 0.44 EUR |
| 286+ | 0.18 EUR |
| 1000+ | 0.11 EUR |
| 8000+ | 0.088 EUR |
| 24000+ | 0.075 EUR |
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Technische Details RN1907FE,LF(CT Toshiba
Description: TRANS 2NPN PREBIAS 0.1W ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: ES6, Part Status: Active.
Weitere Produktangebote RN1907FE,LF(CT
| Foto | Bezeichnung | Hersteller | Beschreibung |
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RN1907FE,LF(CT | Hersteller : Toshiba |
 Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) |
Produkt ist nicht verfügbar |
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RN1907FE,LF(CT | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.1W ES6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Part Status: Active |
Produkt ist nicht verfügbar |
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RN1907FE,LF(CT | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.1W ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Part Status: Active |
Produkt ist nicht verfügbar |