Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > RN1907FE,LF(CT
RN1907FE,LF(CT

RN1907FE,LF(CT Toshiba Semiconductor and Storage

RN1909FE_datasheet_en_20210818.pdf?did=19126&prodName=RN1909FE Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 3978 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
79+0.23 EUR
126+0.14 EUR
500+0.10 EUR
1000+0.09 EUR
2000+0.08 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details RN1907FE,LF(CT Toshiba Semiconductor and Storage

Description: TRANS 2NPN PREBIAS 0.1W ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: ES6, Part Status: Active.

Weitere Produktangebote RN1907FE,LF(CT nach Preis ab 0.05 EUR bis 0.39 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RN1907FE,LF(CT RN1907FE,LF(CT Hersteller : Toshiba RN1909FE_datasheet_en_20210818-1150545.pdf Digital Transistors Bias Resistor Built-in transistor
auf Bestellung 9700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+0.39 EUR
13+0.23 EUR
100+0.11 EUR
1000+0.08 EUR
4000+0.06 EUR
8000+0.05 EUR
24000+0.05 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
RN1907FE,LF(CT RN1907FE,LF(CT Hersteller : Toshiba 34docget.jsppidrn1907felangentypedatasheet.jsppidrn1907felangentype.pdf Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1907FE,LF(CT RN1907FE,LF(CT Hersteller : Toshiba Semiconductor and Storage RN1909FE_datasheet_en_20210818.pdf?did=19126&prodName=RN1909FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH