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RN1907FE,LF(CT

RN1907FE,LF(CT Toshiba Semiconductor and Storage

RN1909FE_datasheet_en_20210818.pdf?did=19126&prodName=RN1909FE Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.065 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN1907FE,LF(CT Toshiba Semiconductor and Storage

Description: TRANS PREBIAS 2NPN 50V 100MA ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: ES6, Part Status: Active.

Weitere Produktangebote RN1907FE,LF(CT nach Preis ab 0.058 EUR bis 0.35 EUR

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RN1907FE,LF(CT RN1907FE,LF(CT Hersteller : Toshiba 1BFF43B37D7B28AA0CBBEFBD0C15C8638349A452F6746F62809324922D66C806.pdf Digital Transistors Bias Resistor Built-in transistor
auf Bestellung 9648 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+0.35 EUR
14+0.21 EUR
100+0.13 EUR
500+0.095 EUR
1000+0.084 EUR
2000+0.076 EUR
4000+0.058 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
RN1907FE,LF(CT RN1907FE,LF(CT Hersteller : Toshiba Semiconductor and Storage RN1909FE_datasheet_en_20210818.pdf?did=19126&prodName=RN1909FE Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 7692 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
84+0.21 EUR
135+0.13 EUR
500+0.096 EUR
1000+0.084 EUR
2000+0.075 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
RN1907FE,LF(CT RN1907FE,LF(CT Hersteller : Toshiba 34docget.jsppidrn1907felangentypedatasheet.jsppidrn1907felangentype.pdf Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)
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