Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > RN1908(T5L,F,T)

RN1908(T5L,F,T) Toshiba Semiconductor and Storage

Name: RN1908(T5L,F,T)
Brand: Toshiba Semiconductor and Storage
SKU: 4516452-3
Price: 0.12 EUR
Availability: InStock

Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6

auf Bestellung 2986 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis ohne MwSt
32+	0.56 EUR
45+	0.39 EUR
100+	0.2 EUR
500+	0.16 EUR
1000+	0.12 EUR

Mindestbestellmenge: 32

Produktrezensionen

Produktbewertung abgeben

Technische Details RN1908(T5L,F,T) Toshiba Semiconductor and Storage

Description: TRANS 2NPN PREBIAS 0.2W US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: US6.

Weitere Produktangebote RN1908(T5L,F,T)

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis ohne MwSt
	RN1908(T5L,F,T)	Hersteller : Toshiba Semiconductor and Storage	Description: TRANS 2NPN PREBIAS 0.2W US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6	Produkt ist nicht verfügbar