RN1908,LF(CT Toshiba
Hersteller: ToshibaDigital Transistors NPN x 2 BRT, Q1BSR=22kOhm, Q1BER=47kOhm, Q2BSR=22kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A
auf Bestellung 8810 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 0.25 EUR |
| 17+ | 0.17 EUR |
| 100+ | 0.08 EUR |
| 1000+ | 0.08 EUR |
| 3000+ | 0.07 EUR |
| 9000+ | 0.05 EUR |
| 24000+ | 0.05 EUR |
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Produktbewertung abgeben
Technische Details RN1908,LF(CT Toshiba
Description: NPNX2 BRT Q1BSR22KOHM Q1BER47KOH, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: US6.
Weitere Produktangebote RN1908,LF(CT nach Preis ab 0.09 EUR bis 0.37 EUR
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RN1908,LF(CT | Hersteller : Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR22KOHM Q1BER47KOH Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 |
auf Bestellung 2995 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1908,LF(CT | Hersteller : Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR22KOHM Q1BER47KOH Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 |
Produkt ist nicht verfügbar |