RN1908,LF(CT Toshiba
Hersteller: Toshiba
Digital Transistors NPN x 2 BRT, Q1BSR=22kOhm, Q1BER=47kOhm, Q2BSR=22kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A
| Anzahl | Preis |
|---|---|
| 12+ | 0.25 EUR |
| 17+ | 0.17 EUR |
| 100+ | 0.084 EUR |
| 1000+ | 0.077 EUR |
| 3000+ | 0.07 EUR |
| 9000+ | 0.048 EUR |
| 24000+ | 0.046 EUR |
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Technische Details RN1908,LF(CT Toshiba
Description: NPNX2 BRT Q1BSR22KOHM Q1BER47KOH, Supplier Device Package: US6, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 22kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 200mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote RN1908,LF(CT nach Preis ab 0.09 EUR bis 0.37 EUR
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RN1908,LF(CT | Hersteller : Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR22KOHM Q1BER47KOH Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
auf Bestellung 2995 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1908,LF(CT | Hersteller : Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR22KOHM Q1BER47KOH Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |