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RN1908,LF(CT Toshiba


RN1908_datasheet_en_20211115-1150895.pdf
Hersteller: Toshiba
Digital Transistors NPN x 2 BRT, Q1BSR=22kOhm, Q1BER=47kOhm, Q2BSR=22kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A
auf Bestellung 8810 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+0.3 EUR
17+0.2 EUR
100+0.1 EUR
1000+0.092 EUR
3000+0.083 EUR
9000+0.057 EUR
24000+0.055 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN1908,LF(CT Toshiba

Description: TRANS PREBIAS 2NPN 50V 100MA US6, Supplier Device Package: US6, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 22kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 200mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).

Weitere Produktangebote RN1908,LF(CT nach Preis ab 0.11 EUR bis 0.44 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
RN1908,LF(CT RN1908,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18826&prodName=RN1908 Description: TRANS PREBIAS 2NPN 50V 100MA US6
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
auf Bestellung 2997 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.44 EUR
80+0.26 EUR
129+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 48 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1908,LF(CT docget.jsp?did=18826&prodName=RN1908
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA US6
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
auf Bestellung 2997 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
80+0.26 EUR
129+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 48 Stücke
Im Einkaufswagen  Stück im Wert von  UAH