RN1961(TE85L,F)

RN1961(TE85L,F) Toshiba Semiconductor and Storage



Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: US6
Resistor - Emitter Base (R2): 4.7kOhms
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
34+0.53 EUR
Mindestbestellmenge: 24
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Technische Details RN1961(TE85L,F) Toshiba Semiconductor and Storage

Description: TRANS 2NPN PREBIAS 0.2W US6, Supplier Device Package: US6, Resistor - Emitter Base (R2): 4.7kOhms, Resistor - Base (R1): 4.7kOhms, Frequency - Transition: 250MHz, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 200mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO).

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RN1961(TE85L,F) RN1961(TE85L,F) Hersteller : Toshiba Semiconductor and Storage Description: TRANS 2NPN PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 4.7kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
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RN1961(TE85L,F) RN1961(TE85L,F) Hersteller : Toshiba RN1961_datasheet_en_20191118-1609027.pdf Digital Transistors US6 PLN (LF) TRANSISTOR Pd 50mW F 1MHz
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