Produkte > TOSHIBA > RN2101,LF(CT
RN2101,LF(CT

RN2101,LF(CT Toshiba


RN2101_datasheet_en_20220913-948311.pdf Hersteller: Toshiba
Bipolar Transistors - Pre-Biased Bias Resistor with Built-in Transistor
auf Bestellung 38813 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
103+0.51 EUR
152+ 0.34 EUR
358+ 0.15 EUR
1000+ 0.099 EUR
3000+ 0.083 EUR
9000+ 0.068 EUR
45000+ 0.052 EUR
Mindestbestellmenge: 103
Produktrezensionen
Produktbewertung abgeben

Technische Details RN2101,LF(CT Toshiba

Description: TRANS PREBIAS PNP 50V 0.1A SSM, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V, Supplier Device Package: SSM, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 100 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms.

Weitere Produktangebote RN2101,LF(CT

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RN2101,LF(CT RN2101,LF(CT Hersteller : Toshiba rn2105_datasheet_en_20191204.pdf Trans Digital BJT PNP 50V 100mA 100mW Automotive AEC-Q101 3-Pin SSM T/R
auf Bestellung 312 Stücke:
Lieferzeit 14-21 Tag (e)
RN2101,LF(CT RN2101,LF(CT Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2101 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
RN2101,LF(CT RN2101,LF(CT Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2101 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar