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RN2101MFV,L3XHF(CT

RN2101MFV,L3XHF(CT Toshiba

RN2101MFV_datasheet_en_20241029-1116134.pdf Hersteller: Toshiba
Digital Transistors AUTO AEC-Q PNP Q1BSR=4.7kO, Q1BER=4.7kO, VCEO=-50V, IC=-0.1A (SOT-723)
auf Bestellung 15429 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+0.43 EUR
11+0.26 EUR
100+0.17 EUR
500+0.12 EUR
1000+0.10 EUR
2500+0.09 EUR
5000+0.08 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RN2101MFV,L3XHF(CT Toshiba

Description: TRANS PREBIAS PNP 50V 0.1A VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V, Supplier Device Package: VESM, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, Grade: Automotive, Qualification: AEC-Q101, Resistors Included: R1 and R2.

Weitere Produktangebote RN2101MFV,L3XHF(CT nach Preis ab 0.10 EUR bis 0.44 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RN2101MFV,L3XHF(CT RN2101MFV,L3XHF(CT Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2101MFV&returnFlg=false Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 7975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
67+0.27 EUR
107+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.10 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
RN2101MFV,L3XHF(CT RN2101MFV,L3XHF(CT Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2101MFV&returnFlg=false Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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Im Einkaufswagen  Stück im Wert von  UAH